a, nov ,2010 to - 220 f plastic - encapsulate diodes mbr f 10 6 0, 70 , 80 , 90 , 100 ct schottky barrier rectifier features ? schottky barrier chip ? guard ri ng die construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications max imum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr f 10 60 ct mbr f 10 70 ct mbr f 10 80 ct mbr f 10 90 ct mbr f 10 100 ct unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc b locking voltage 60 70 80 90 100 v v r(rms) rms reverse voltage 42 49 56 63 70 v i o average rectified output current 10 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 120 a p d power d issipation 2 w r ja thermal r esistance from j unction to a m bient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 to - 220 f 1. anode 2. cathode 3. anode tiger electronic co.,ltd
a, nov ,2010 electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit mbr f 10 60 ct 60 mbr f 10 70 ct 70 mbr f 10 80 ct 80 mbr f 10 90 ct 90 reverse voltage v (br) mbr f 10 100 ct i r = 0. 1 m a 100 v mbr f 10 60 ct v r = 60 v mbr f 10 70 ct v r = 70 v mbr f 10 80 ct v r = 80 v mbr f 10 90 ct v r = 90 v reverse c urrent i r mbr f 10 100 ct v r = 100 v 0.1 m a mbr f 10 60 ct 0 .8 v f ( 1 ) mbr f 10 70 - 100 ct i f = 5 a 0.85 for ward voltage v f ( 2 ) mbr f 10 60 - 100 ct i f = 10 a 0.95 v mbr f 1060ct 150 typical t otal capacitance c tot mbr f 10 70 - 100 ct v r = 4 v,f=1mhz 300 pf
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